72 and 2.74, respectively, are very similar. The XRD patterns depend only on the Si content given by n. One can notice that the thin films with n = 2.12 do not show any c-Si peak with the exception of the (311) c-Si peak emanating from the substrate. This is in contrast with the spectra of thin films with a higher refractive index (n > 2.5) that also show the (111) and (220) c-Si diffraction peaks attesting the presence of {Selleck Anti-diabetic Compound Library|Selleck Antidiabetic Compound Library|Selleck Anti-diabetic Compound Library|Selleck Antidiabetic Compound Library|Selleckchem Anti-diabetic Compound Library|Selleckchem Antidiabetic Compound Library|Selleckchem Anti-diabetic Compound Library|Selleckchem Antidiabetic Compound Library|Anti-diabetic Compound Library|Antidiabetic Compound Library|Anti-diabetic Compound Library|Antidiabetic Compound Library|Anti-diabetic Compound Library|Antidiabetic Compound Library|Anti-diabetic Compound Library|Antidiabetic Compound Library|Anti-diabetic Compound Library|Antidiabetic Compound Library|Anti-diabetic Compound Library|Antidiabetic Compound Library|Anti-diabetic Compound Library|Antidiabetic Compound Library|Anti-diabetic Compound Library|Antidiabetic Compound Library|Anti-diabetic Compound Library|Antidiabetic Compound Library|buy Anti-diabetic Compound Library|Anti-diabetic Compound Library ic50|Anti-diabetic Compound Library price|Anti-diabetic Compound Library cost|Anti-diabetic Compound Library solubility dmso|Anti-diabetic Compound Library purchase|Anti-diabetic Compound Library manufacturer|Anti-diabetic Compound Library research buy|Anti-diabetic Compound Library order|Anti-diabetic Compound Library mouse|Anti-diabetic Compound Library chemical structure|Anti-diabetic Compound Library mw|Anti-diabetic Compound Library molecular weight|Anti-diabetic Compound Library datasheet|Anti-diabetic Compound Library supplier|Anti-diabetic Compound Library in vitro|Anti-diabetic Compound Library cell line|Anti-diabetic Compound Library concentration|Anti-diabetic Compound Library nmr|Anti-diabetic Compound Library in vivo|Anti-diabetic Compound Library clinical trial|Anti-diabetic Compound Library cell assay|Anti-diabetic Compound Library screening|Anti-diabetic Compound Library high throughput|buy Antidiabetic Compound Library|Antidiabetic Compound Library ic50|Antidiabetic Compound Library price|Antidiabetic Compound Library cost|Antidiabetic Compound Library solubility dmso|Antidiabetic Compound Library purchase|Antidiabetic Compound Library manufacturer|Antidiabetic Compound Library research buy|Antidiabetic Compound Library order|Antidiabetic Compound Library chemical structure|Antidiabetic Compound Library datasheet|Antidiabetic Compound Library supplier|Antidiabetic Compound Library in vitro|Antidiabetic Compound Library cell line|Antidiabetic Compound Library concentration|Antidiabetic Compound Library clinical trial|Antidiabetic Compound Library cell assay|Antidiabetic Compound Library screening|Antidiabetic Compound Library high throughput|Anti-diabetic Compound high throughput screening| crystalline Si-np. Besides, the XRD results are in perfect agreement
with the Raman spectra shown in Figure 7, since the c-Si Raman peaks were also detected but only when n was above 2.5 (SiN x<0.8). Figure 11 Evolution of XRD pattern of 1100°C-annealed SiN x layers with the refractive index. XRD curves of thin films produced by the N2-reactive and the co-sputtering methods are displayed in black and gray, respectively. Photoluminescence Figure 12 shows the PL and the absorption spectra of several BV-6 price SiN x thin films with various
n. In the right part of the figure, it is seen that the absorption rises with increasing n which is explained by the increase of the Si content. In the same time, we observed a progressive redshift of the PL bands with a concomitant increase of their widths GANT61 clinical trial as displayed in the inset. Moreover, one can notice that the PL intensity significantly increases while n increases from 2.01 to 2.12, which is partly explained by the rise of the absorption. Reminding that FTIR spectra showed Diflunisal that the disorder increased with increasing n, the increase of the non-radiative recombination rate would then explain the decrease of the PL intensity while n reaches 2.14. Besides, thin films with n > 2.4 (SiN x<0.85) did not exhibit any PL even after annealing with various temperatures ranging up to 1100°C. The typical variation of the PL intensity of one luminescent film with the annealing temperature is shown in Figure 13. Interestingly, as-deposited films showed no PL, and it is seen that the highest integrated PL intensity was found at 900°C. The origin of the visible PL easily perceivable by the naked eye is investigated in the ‘Discussion’. Figure 12 Variations
of the PL and the absorption spectra with the refractive index n . The inset shows the evolution of the peak position and the band width with n. Figure 13 Evolution of the integrated PL intensity with the annealing temperature. Laser annealing Figure 14 shows the Raman spectra of one luminescent film with n = 2.34 recorded with various excitation power densities. Although we did not detect by Raman spectroscopy (Figure 7a) any crystalline Si-np even after annealing at 1100°C, we could however form small Si nanocrystals by laser annealing. This formation has been evidenced by Raman measurements that are separated in two steps for clarity. During the first step (white arrows), the power density of the laser was increased from 0.14 to 0.70 MW/cm2.